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Title:
Schottkyjeva bariera : moderni pogledi na star problem
Authors:
ID
Korošak, Dean
(Author)
ID
Cvikl, Bruno
(Author)
Files:
http://www.dlib.si/details/URN:NBN:SI:doc-8OIN0NUF
Language:
Slovenian
Work type:
Not categorized
Typology:
1.02 - Review Article
Organization:
FGPA - Faculty of Civil Engineering, Transportation Engineering and Architecture
Abstract:
V drugem delu prispevka opisujemo transportne lastnosti stika kovine in polprevodnika. V začetku je podan pregledni opis različnih mehanizmov prenosa naboja v idealni Schottkyjevi diodi. V nadaljevanju je opisan transport naboja v neidealnem stiku z vmesno kontrolno plastjo, ki nastane pri nanašanju z metodo CIS. Dodatni transport naboja v takšnih Schottkyjevih heterostrukturah lahko povzroči kontinuum elektronskih stanj, ki se pojavi na meji med urejenim in neurejenim delom polprevodnika. Opisan je vpliv takšnega transporta naboja na tokovno karakteristiko diode.
Keywords:
vakuumska tehnika
,
površine
,
kovine
,
polprevodniki
,
tanke plasti
,
curek ioniziranih skupkov
Publisher:
Društvo za vakuumsko tehniko Slovenije
Year of publishing:
1998
Number of pages:
str. 13-16
Numbering:
18, št. 3
PID:
20.500.12556/DKUM-53330
UDC:
539.2
ISSN on article:
0351-9716
COBISS.SI-ID:
4173078
NUK URN:
URN:SI:UM:DK:YPTCRDQO
Publication date in DKUM:
10.07.2015
Views:
1859
Downloads:
42
Metadata:
Categories:
Misc.
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:
KOROŠAK, Dean and CVIKL, Bruno, 1998, Schottkyjeva bariera : moderni pogledi na star problem.
Vakuumist
[online]. 1998. Vol. 18, no. 3, p. 13–16. [Accessed 9 April 2025]. Retrieved from: http://www.dlib.si/details/URN:NBN:SI:doc-8OIN0NUF
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Record is a part of a journal
Title:
Vakuumist
Shortened title:
Vakuumist
Publisher:
Društvo za vakuumsko tehniko Slovenije
ISSN:
0351-9716
COBISS.SI-ID:
16059650
Secondary language
Language:
English
Title:
Schottky barrier - modern views on an old problem (Part II)
Abstract:
In the second part of the paper the transport mechanisms of the metal-semiconductor contact are discussed. An overview of the basic transport mechanism contributing to the current density through the ideal Schottky structure is given. An existance of possible additional charge transport mechanism due to the presence of the disordered interfacial control layer in the ICB deposited Schottky heterostrutures is further discussed. The influence of such a transport mechanism on the current-voltage characteristic is described.
Keywords:
vacuum techniques
,
surfaces
,
metals
,
semiconductors
,
thin layers
,
CIS
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