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Abstract: An alternative interpretation of two different sets of published temperature-dependent current-voltage a-NPD (i.e. N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,11-biphenyl)-4,4'-diamine) organic semiconductor data is presented. The measurements are described in terms of the hole drift current density expressed with two parameters: the electric field at the hole-injecting interface, Eint, and, ?max, the hole mobility determined by the measured current density at the maximum value of the externally applied electric field, Ea, in a given experiment. The former parameter, depending on the contact résistance, may be a function of Ea but the latter is Ea independent, The fixed value of Eint signifies the occurrence of the space charge limited current, SCLC, within the electrode/a-NPD structures and the contact is ohmic. Then, the calculated weak bias-dependent hole drift mobility, a function of Eint, equals the well%known exponential bias-dependent mobility, and saturates. The data not displaying SCLC characteristics are used for the calculation of Eint dependence on the applied field, Ea. It is shown that the quasi-ohmic contacts cause Eint to become a strong double-valued function of the externally applied electric field, Ea, described in terms of the distorted, inverted, high order parabola. The corresponding bias-dependent hole drift mobility is non-exponential and evolves on a considerably lower level than in SCLC cases. It is found that a sufficiently increased Ea alters the quasi-ohmic contact/a-NPD region into the ohmic one. A simple model of a thin, net hole charged, electrode/a-NPD interface enables the relationship between the deduced interfacial electric field, Eint, and the Ea dependent Gaussian width, as well as the energy shift of its peak along the negative binding energy is to be investigated. The currentvoltage method appears to be a helpful expedient for the investigation of the electric field at hole-injecting electrode/organic interfaces.
Keywords: electrode/organic electric field, contact affected hole mobility, organic interface disorder parameters
Published in DKUM: 22.12.2023; Views: 572; Downloads: 7
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Abstract: V članku je opisan postopek naparjevanja tankih plasti po metodi curka ioniziranih skupkov, ki rabi za nizkotemperaturno nanašanje in epitakso visokokvalitetnih tankih plasti.
Keywords: vakuumska tehnika, CIS, curek ioniziranih skupkov, tanke plasti
Published in DKUM: 10.07.2015; Views: 2085; Downloads: 37
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Abstract: The description of the metal semiconductor contact in the framework of the general model incorporating the interfacial control layer between the metal and the ordered semiconductor is given. Special attention is given to the iCB Schottky structures for nonzero acceleration voltage featuring the disordered interfacial control layer characterized by the metal atoms incorporated into the semiconductor lattice and the DIGS continuum. The expression for the Schottky barrier height variation in ICB structures is given.
Keywords: površine, kovine, polprevodniki, tanke plasti
Published in DKUM: 10.07.2015; Views: 1318; Downloads: 50
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Abstract: Journal of Energy Technology is a scientific and professional journal in the field of energy and energy technologies. The first issue of Journal of Energy Technology was launched in November 2008. The founder of the journal is University of Maribor, Faculty of Energy Technology. The journal is intended for domestic and foreign scientific, technical and general public. With the aim of increasing the recognition of the journal, the articles in journal are mainly in English. The journal is issued quarterly in both printed and electronic form.
Keywords: scientific journals, energy technology
Published in DKUM: 28.05.2012; Views: 1709; Downloads: 46
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Published in DKUM: 26.07.2007; Views: 2851; Downloads: 0