| | SLO | ENG | Piškotki in zasebnost

Večja pisava | Manjša pisava

Iskanje po katalogu digitalne knjižnice Pomoč

Iskalni niz: išči po
išči po
išči po
išči po
* po starem in bolonjskem študiju

Opcije:
  Ponastavi


1 - 3 / 3
Na začetekNa prejšnjo stran1Na naslednjo stranNa konec
1.
2.
On new approach to rheological modeling of an electrostatic ash and water - quadratic law
Primož Ternik, 2002, objavljeni znanstveni prispevek na konferenci

Opis: In the paper a new rheological model for an electrostatic ash and water mixture is proposed. The fundamental equation of the rheological model was used to determine the relationship between the shear stress and the shear rate as well as the equation of a velocity profile for the flow through a straight pipe. Experimental results obtained from a capillary viscometer were used as the basis to determine the parameters for the proposed model by the non-linear regression analysis. With the Quadratic law a numerical analysis of a mixture flow through a capillary pipe with the finite volume method was performed. The derived equations for the velocity profile, shear stress and shear rate were validated through a comparison of numerically obtained and theoretical results. Finally, the compariosn between the Quadratic and the Power law is presented.
Ključne besede: fluid mechanics, non-Newtonian fluids, mixture of electrofilter ash and water, flow in pipes, capillary pipes, rheological model, velocity profile, shear stress, finite volume method, numerical analysis, quadratic law, power law, mehanika fluidov
Objavljeno: 01.06.2012; Ogledov: 1418; Prenosov: 15
URL Povezava na celotno besedilo

3.
MOS-FET as a current sensor in power electronics converters
Rok Pajer, Miro Milanovič, Branko Premzel, Miran Rodič, 2015, izvirni znanstveni članek

Opis: This paper presents a current sensing principle appropriate for use in power electronics’ converters. This current measurement principle has been developed for metal oxide semiconductor field effect transistor (MOS-FET) and is based on UDS voltage measurement. In practice, shunt resistors and Hall effect sensors are usually used for these purposes, but the presented principle has many advantages. There is no need for additional circuit elements within high current paths, causing parasitic inductances and increased production complexity. The temperature dependence of MOS-FETs conductive resistance RDS−ON is considered in order to achieve the appropriate measurement accuracy. The “MOS-FET sensor” is also accompanied by a signal acquisition electronics circuit with an appropriate frequency bandwidth. The obtained analogue signal is therefore interposed to an A-D converter for further data acquisition. In order to achieve sufficient accuracy, a temperature compensation and appropriate approximation is used (RDS−ON = RDS−ON(Vj)). The MOS-FET sensor is calibrated according to a reference sensor based on the Hall-effect principle. The program algorithm is executed on 32-bit ARM M4 MCU, STM32F407.
Ključne besede: power electronics, converters, MOS-FET, current measurement, thermal model
Objavljeno: 22.06.2017; Ogledov: 495; Prenosov: 185
.pdf Celotno besedilo (1,32 MB)
Gradivo ima več datotek! Več...

Iskanje izvedeno v 0.06 sek.
Na vrh
Logotipi partnerjev Univerza v Mariboru Univerza v Ljubljani Univerza na Primorskem Univerza v Novi Gorici